PART |
Description |
Maker |
ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存??? High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??) High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五,10纳秒- 2微秒 HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
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International Rectifier, Corp. Semtech Corporation
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CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
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Central Semiconductor C...
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ATV2500BQL-30KM/883 ATV2500BBQBQL |
High-speed High-density UV-erasable Programmable Logic Device(高速高密度紫外线可擦除PLD) ATV2500B(BQ)(BQL) [Updated 5/00. 21 Pages] 2500 gate high-speed CPLD. standard & low power. 40 & 44 pins offered in Military Temp Grade only.
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聚兴科技股份有限公司 Atmel Corp.
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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SCF10000 SCF5000 SCF7500 SCF12500 SCF2500 |
High Voltage,High Density Fast Recovery Rectifier(反向电压2500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压7500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压5000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
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Semtech Corporation
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1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
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Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
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HDSOLDERCUP HDVERTICAL 780-M26-113R051 780-MYY-113 |
MALE-HIGH DENSITY MALE-HIGH DENSITY-MACHINED CONTACTS-VERTICAL
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List of Unclassifed Manufacturers List of Unclassifed Man...
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ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFAST?/a> High Density PLD
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Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
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ISPLSI1032 ISPLSI1032-60LG_883 ISPLSI1032-80LJ ISP |
In-System Programmable High Density PLD EE PLD, 17 ns, PQCC84 High-Density Programmable Logic
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Lattice Semiconductor, Corp. LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation
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ULN2004L ULQ2004L 2003 ULN2023A ULN2023L ULN2024A |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压,大电流达林顿阵列 Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces 高电压,大电流达林顿阵列 Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS HIGH-VOLTAGE HIGH-CURRENT DARLINGTON ARRAYS 7-Channel High-Current Darlington Array High-Voltage, High-Current Darlington Arrays(杈???靛?95V锛??浜???靛钩?昏??佃矾??????澶?????璐?浇?寸??ュ???????澶х?娴?揪??】?靛?) HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS
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NetPower Technologies, Inc. Allegro MicroSystems, Inc. AllegroMicroSystems ALLEGRO[Allegro MicroSystems]
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